data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 4v drive nch + nch mosfet sh8k11 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance.2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit package taping code tb basic ordering unit (pieces) 2500 sh8k11 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 3.5 a pulsed i dp ? 14 a continuous i s 1.6 a pulsed i sp 14 a 2.0 w / total 1.4 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. p d type source current(body diode) drain current parameter power dissipation (1) tr1 source(2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode *2 *1 *1 sop8 (1) (8) (5) (4) ? 2 ? 1 ? 2 ? 1 (8) (7) (1) (2) (6) (5) (3) (4) 1/6 2011.02 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet sh8k11 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -7 09 8 i d =3.5a, v gs =10v - 90 126 i d =3.5a, v gs =4.5v - 100 140 i d =3.5a, v gs =4.0v forward transfer admittance l y fs l 1.5 - - s i d =3.5a, v ds =10v input capacitance c iss - 85 - pf v ds =10v output capacitance c oss - 40 - pf v gs =0v reverse transfer capacitance c rss - 20 - pf f=1mhz turn-on delay time t d(on) -4-n s i d =1.7a, v dd 15v rise time t r -8-n s v gs =10v turn-off delay time t d(off) - 18 - ns r l =8.8 ? fall time t f -3-n s r g =10 ? total gate charge q g - 1.9 - nc i d =3.5a, v dd 15v gate-source charge q gs - 0.8 - nc v gs =5v gate-drain charge q gd - 0.4 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =3.5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-stateresistance r ds (on) * * ** * * * * * ** * * * * * * 2/6 2011.02 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet sh8k11 ? electrical characteristic curves (ta=25 ? c) 0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : i d [a] drain-source voltage : v ds [v] 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 2.8v ta=25 c pulsed fig.2 typical output characteristics( ) drain-source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.3 typical transfer characteristics drain current : i d [a] gate-source voltage : v gs [v] 10 100 1000 0.1 1 10 v gs = 4.0v v gs = 4.5v v gs = 10v . ta=25 c pulsed fig.4 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.5 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = 4.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.6 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 3/6 2011.02 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet sh8k11 10 100 1000 0.1 1 10 v gs = 4.0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.7 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain-current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.9 reverse drain current vs. sourse-drain voltage source current : is [a] source-drain voltage : v sd [v] 0 50 100 150 200 0 2 4 6 8 10 i d = 3.5a i d = 1.75a ta=25 c pulsed fig.10 static drain-source on-state resistance vs. gate source voltage static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) ta=25 c v dd = 15v v gs =10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain-current : i d [a] 0 2 4 6 8 10 0 1 2 3 4 5 ta=25 c v dd = 15v i d = 3.5a pulsed fig.12 dynamic input characteristics gate-source voltage : v gs [v] total gate charge : qg [nc] 4/6 2011.02 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet sh8k11 1 10 100 1000 0.01 0.1 1 10 100 c iss c rss ta=25 c f=1mhz v gs =0v c oss fig.13 typical capacitance vs. drain-source voltage drain-source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =1ms ta=25 c single pulse mounted on a ceramic board. (30mm 30mm 0.8mm) fig.14 maximum safe operating aera drain-source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.01 1 100 mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch- a) =89.3 c /w rth (ch- a) (t)=r(t) rth (ch- a) ta=25 c single pulse fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 5/6 2011.02 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet sh8k11 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to designesd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.02 - rev.a downloaded from: http:///
r1120 a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes downloaded from: http:///
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